LXE18300X Просмотр технического описания (PDF) - Philips Electronics

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LXE18300X

NPN microwave power transistor

Philips Electronics 

Philips Semiconductors

NPN microwave power transistor

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

VCBO

VCER

VCEO

VEBO

IC

Ptot

Tstg

Tj

Tsld

collector-base voltage

collector-emitter voltage

collector-emitter voltage

emitter-base voltage

collector current

total power dissipation

storage temperature range

operating junction temperature

soldering temperature

open emitter

RBE = 220 Ω

open base

open collector

Tmb = 75 °C

t ≤ 10 s; note 1

Note

1. Up to 0.2 mm from ceramic.

Product specification

LXE18300X

MIN.

−

−

−

−

−

−

−65

−

−

MAX.

45

30

20

3

6

57

+200

200

235

UNIT

V

V

V

V

A

W

°C

°C

°C

10

IC

(A)

1

10−1

MRA433

(1)

10−2

1

10

102

VCE (V)

Tmb ≤ 75 °C.

(1) Region of permissible DC operation.

Fig.2 DC SOAR.

handbook1, 0h0alfpage

Ptot

(W)

80

60

40

20

0

0

50

MRA442

100

150

200

Tmb (oC)

Ptot max = 57 W.

Fig.3 Maximum power dissipation derating as a

function of mounting base temperature.

1997 Feb 18

MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15

3

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