LXE18300X Просмотр технического описания (PDF) - Philips Electronics
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LXE18300X Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN microwave power transistor
Product specification
LXE18300X
FEATURES
• Internal input and output
prematching ensures a good
stability and allows an easier
design of wideband circuits
• Diffused emitter ballasting resistors
provide excellent current sharing
and withstanding at a high VSWR
• Interdigitated structure provides
high emitter efficiency
• Gold metallization realizes very
good stability of the characteristics
and excellent lifetime
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance.
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common emitter class AB
amplifier.
MODE OF
OPERATION
f
(GHz)
Class AB (CW) 1.85
VCE
(V)
24
ICQ
(A)
0.3
PL1
(W)
≥27
GPO
(dB)
≥8
PINNING - SOT439A
PIN
DESCRIPTION
1
collector
2
base
3
emitter connected to flange
APPLICATIONS
Intended for use in common emitter
class AB power amplifiers for military
and professional applications at
frequencies from 1.6 to 1.85 GHz, in
CW conditions.
ook, 4 columns
3
DESCRIPTION
Top view
NPN silicon planar epitaxial
microwave power transistor in a
SOT439A metal ceramic flange
package with emitter connected to
flange.
1
c
b
3
e
2
MAM045
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18
MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
2
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