LXE16350X Просмотр технического описания (PDF) - Philips Electronics

Номер в каталоге

Компоненты Описание

Список матч

LXE16350X

NPN microwave power transistor

Philips Electronics 

Philips Semiconductors

NPN microwave power transistor

Product specification

LXE16350X

handbook,4h0alfpage

PL

(W)

30

20

MRA440

(1)

(2)

(3)

10

0

0

2

4

Pi (W) 6

VCE = 24 V.

(1) ICQ = 300 mA.

(2) ICQ = 100 mA.

(3) ICQ = 10 mA.

Fig.6 Load power as a function of input power.

handbook−, h1a5lfpage

dim

(dBc)

(1)

−25

(2)

−35

(3)

MRA439

−45

0

10

20

30

Po (W)

VCE = 24 V.

f1 = 1.65 GHz

f2 = 1.6502 GHz.

(1) ICQ = 10 mA.

(2) ICQ = 100 mA.

(3) ICQ = 300 mA.

Fig.7 Intermodulation distortion as a function of

average output power.

1997 Feb 19

7

Share Link: