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LXE16350X

NPN microwave power transistor

Philips Electronics 

Philips Semiconductors

NPN microwave power transistor

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

VCBO

VCER

VCEO

VEBO

IC

Ptot

Tstg

Tj

Tsld

collector-base voltage

collector-emitter voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

total power dissipation

storage temperature

operating junction temperature

soldering temperature

open emitter

RBE = 220 Ω

open base

open collector

Tmb = 75 °C

t ≤ 10 s; note 1

Note

1. Up to 0.2 mm from ceramic.

Product specification

LXE16350X

MIN. MAX. UNIT

−

45 V

−

30 V

−

20 V

−

3

V

−

6

A

−

57 W

−65 +200 °C

−

200 °C

−

235 °C

10

handbook, halfpage

IC

(A)

1

10−1

MRA441

(1)

10−2

1

10

VCE (V)

102

Tmb ≤ 75 °C.

(1) Region of permissible DC operation.

Fig.2 DC SOAR.

handbook1, 0h0alfpage

Ptot

(W)

80

MRA442

60

40

20

0

0

50

100

150

200

Tmb (oC)

Ptot max = 57 W.

Fig.3 Maximum power dissipation derating as a

function of mounting base temperature.

1997 Feb 19

3

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