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LXE16350X

NPN microwave power transistor

Philips Electronics 

Philips Semiconductors

NPN microwave power transistor

Product specification

LXE16350X

handbook, full pagewidth

BIAS CIRCUIT

R1

TR1

R2

P1

D1

D2

R3

C1

PREMATCHINGTEST CIRCUIT

+VCC

C6

C5

L2

L1

D.U.T.

0V

MBC421 - 1

Fig.5 Class AB bias circuit at 1.65 GHz.

List of components (see Fig 5)

COMPONENT

DESCRIPTION

TR1

transistor, BDT85 (or equivalent)

D1

diode, IN4148 (or equivalent); note 1

D2

diode, BY239800; note 2

R1

resistor

R2

resistor

R3

resistor

P1

potentiometer, 10 turns (sfernice)

C1

electrolytic capacitor

C5, C6

feedthrough bypass capacitor

L1

5 turns 0.5 mm copper wire with ferrite bead

L2

5 turns 0.5 mm copper wire

Notes

1. In thermal contact with TR1.

2. In thermal contact with D.U.T.

VALUE

CATALOGUE NO.

100 Ω

10 kΩ

56 Ω

4.7 kΩ

10 µF (>30 V)

1500 pF

Erie, ref. 1250-003

1997 Feb 19

6

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