BFC505 Просмотр технического описания (PDF) - Philips Electronics

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BFC505

NPN wideband cascode transistor

Philips Electronics 

Philips Semiconductors

NPN wideband cascode transistor

Product specification

BFC505

25

handgbaoionk, halfpage

(dB)

20

15

10

5

0

−5

10−1

RL = 470 Ω

MGG217

50 Ω

1

IC (mA)

10

VCE = 1 V; RS = 50 Ω; XS = XL = opt; f = 900 MHz.

Fig.8 Transducer gain as a function of collector

current; typical values.

10

handbook, halfpage

IP3

(dBm)

0

−10

MGG218

(1)

(2)

(3)

−20

(4)

−30

10−1

1

IC (mA)

10

Point tuned for maximum gain with double slug tuners; f = 900 MHz.

(1) IP3 (output); VC2-E1 = 3 V. (2) IP3 (output); VC2-E1 = 1 V.

(3) IP3 (input); VC2-E1 = 3 V. (4) IP3 (input); VC2-E1 = 1 V.

Fig.9 Third order intercept point as a function of

collector current; typical values.

1996 Oct 08

7

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