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BFC505

NPN wideband cascode transistor

Philips Electronics 

Philips Semiconductors

NPN wideband cascode transistor

Product specification

BFC505

Notes

1. VB2 = VC2−E1/2 + 0.6 V

2.

MSG =

s12 ⁄ s21

×





k

–

k2

–

1





;

k = -1----+-------s---1--1----×-----s----2--2----–-----s---1--2----×-----s---2---1----2----–----------s---1---1----2----–------s---2--2-----2----

2 × s12 × s 21

3. Maximum isolation is defined as the isolation when S21 of the amplifier is reduced to unity (buffer application).

4. IC = 1 mA; VCE = 3 V; RS = 50 Ω; ZL = opt; Tamb = 25 °C; fp = 900 MHz; fq = 902 MHz; measured at

f(2p−q) = 904 MHz.

600

handbook, halfpage

Ptot

(mW)

double loaded

400

single loaded

200

MBG208

handbook,1h2alfpage

fT

(GHz)

8

4

MBG209

VC2-E1 = 12 V

9V

6V

3V

0

0

50

100

150

200

Ts (oC)

Fig.2 Power derating as a function of soldering

point temperature; typical values.

0

10−1

1

10 IC (mA) 102

f = 1 GHz; Tamb = 25 °C.

Fig.3 Transition frequency as a function of

collector current; typical values.

1996 Oct 08

5

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