BFC505 Просмотр технического описания (PDF) - Philips Electronics
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BFC505 Datasheet PDF : 11 Pages
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Philips Semiconductors
NPN wideband cascode transistor
Product specification
BFC505
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
DC characteristics of any single transistor
V(BR)CBO collector-base breakdown voltage IC = 2.5 µA; IE = 0
20
V(BR)CEO collector-emitter breakdown
IC = 10 µA; IB = 0
8
voltage
V(BR)EBO emitter-base breakdown voltage IE = 2.5 µA; IC = 0
2.5
ICBO
collector-base leakage current
IE = 0; VCB = 6 V
−
hFE
DC current gain
IC = 5 mA; VCE = 6 V
60
AC characteristics of the cascode configuration measured in test circuit (note 1)
fT
Cc
Cre2
Cre
MSG
transition frequency
collector capacitance T2
feedback capacitance T2
feedback capacitance
maximum stable power gain;
note 2
s21 2
insertion power gain
s21 ⁄ s12 2 maximum isolation; note 3
IC = 5 mA; VC2-E1 = 3 V; f = 1 GHz −
IE = ie = 0; VC2-B2 = 0; f = 1 MHz −
IC = 0; VC2-E1 = 3 V; f = 1 MHz
−
IC = 0; VC2-E1 = 3 V; f = 1 MHz
−
IC = 0.25 mA; VC2-E1 = 1 V;
−
f = 300 MHz; Tamb = 25 °C
IC = 0.5 mA; VC2-E1 = 1 V;
−
f = 900 MHz; Tamb = 25 °C
IC = 5 mA; VC2-E1 = 3 V; f = 2 GHz; −
Tamb = 25 °C
IC = 0.5 mA; VC2-E1 = 3 V;
−
f = 300 MHz; Tamb = 25 °C
IC = 5 mA; VC2-E1 = 3 V;
−
f = 900 MHz; Tamb = 25 °C
IC = 5 mA; VC2-E1 = 3 V; f = 2 GHz; −
Tamb = 25 °C
IC = 0.5 mA; VC2-E1 = 1 V;
40
f = 900 MHz
IC = 5 mA; VC2-E1 = 3 V;
60
f = 900 MHz
IC = 5 mA; VC2-E1 = 3 V; f = 2 GHz 40
F
noise figure
IC = 0.5 mA; VC2-E1 = 1 V;
−
f = 500 MHz; ΓS = Γopt
IC = 1 mA; VC2-E1 = 3 V;
−
f = 900 MHz; ΓS = Γopt
IC = 1 mA; VC2-E1 = 1 V;
−
f = 2 GHz; ΓS = Γopt
IP3
third order intercept point (input) note 4
−
−
−
V
−
−
V
−
−
V
−
50 nA
120 250
7.3 −
0.4 −
250
−
10
25 −
GHz
pF
fF
fF
dB
22 −
dB
23 −
dB
21 −
dB
16 −
dB
11
−
dB
45 −
dB
68 −
dB
48 −
dB
1.1 1.4 dB
1.8 2.1 dB
3.5 −
dB
−20 −
dBm
1996 Oct 08
4
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