VG36128161BT Просмотр технического описания (PDF) - Vanguard International Semiconductor

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VG36128161BT

CMOS Synchronous Dynamic RAM

Vanguard International Semiconductor  

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Basic Features and Function Description

1. Simplified State Diagram

VG36128401BT / VG36128801BT / VG36128161BT

CMOS Synchronous Dynamic RAM

Mode

Register

Set

MRS

IDLE

Self

Refresh

SELFSeEnLtFryexit

REF

AUTO

Refresh

CKE

CKE

Power

Down

ROW

ACTIVE

CKE

CKE

Active

Power

Down

Write (Write recovery)

WRITE CKE

SUSPEND CKE

WRITE

Write with

Auto Precharge

WRITE A CKE

SUSPEND CKE

WRITE A

Write

rite recovery

W

Read

Read (write recovery)

AutoRPeraedchwaitrhge

Write

(writAeWurertoictoePvewreriytc)hharge

Read

READ

CKE

CKE

READ

SUSPEND

Read with

Auto Precharge

CKE

READ A

CKE

READA

SUSPEND

POWER

ON

Precharge

Document :1G5-0183

Precharge

Automatic sequence

Manual input

Note: After the AUTO refresh operation, precharge operation is

performed automatically and enter the IDLE state

Rev.1

Page 9

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