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VG36128161BT

CMOS Synchronous Dynamic RAM

Vanguard International Semiconductor  

VIS

VG36128401BT / VG36128801BT / VG36128161BT

CMOS Synchronous Dynamic RAM

Absolute Maximum Ratings

Parameter

Symbol

Conditions

Value

Unit

Supply Voltage

VDD

with respect to VSS

-0.5 to 4.6

V

Supply Voltage for Output

VDDQ

with respect to VSSQ

-0.5 to 4.6

V

Input Voltage

VI

with respect to VSS

-0.5 to 4.6

V

Output Voltage

VO

with respect to VSSQ

-0.5 to 4.6

V

Short circuit output current

IO

50

mA

Power dissipation

PD

Ta = 25 °C

1

W

Operating temperature

TOPT

0 to 70

°C

Storage temperature

TSTG

-65 to 150

°C

Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The

device is not meant to be operated under conditions outside the limits described in the operational section of this

specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.

Recommended Operating Conditions (Ta = 0 ~ 70 °C, unless otherwise noted)

Parameter

Symbol

Min.

Limits

Typ.

Supply Voltage

VDD

3.0

3.3

Supply Voltage for DQ

VDDQ

3.0

3.3

Ground

VSS

0

0

Ground for DQ

VSSQ

0

0

High Level Input Voltage (all inputs)

VIH

2.0

Low Level Input Voltage (all inputs)

VIL

-0.3

Unit

Max.

3.6

V

3.6

V

0

V

0

V

VDDQ + 0.3

V

0.8

V

Pin Capacitance (Ta = 0 ~ 70°C, VDD = VDDQ = 3.3 ± 0.3V , VSS = VSSQ = 0V, unless otherwise noted)

Parameter

Symbol

Limits (Min)

Limits (Max)

Unit

-7H

-7L/-8H

Input Capacitance, address & control pin

CIN

2.5

3.8

5.0

pF

Input Capacitance, CLK pin

CCLK

2.5

3.5

4.0

pF

Data input / output capacitance

CI/O

4.0

6.5

6.5

pF

Document :1G5-0183

Rev.1

Page 5

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