MCH6662-TL-H Просмотр технического описания (PDF) - ON Semiconductor
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MCH6662-TL-H Datasheet PDF : 6 Pages
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MCH6662
4.5
VDS=10V
4.0 ID=2A
3.5
VGS -- Qg
3.0
2.5
2.0
1.5
1.0
0.5
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Total Gate Charge, Qg -- nC
IT16380
PD -- Ta
1.0
When mounted on ceramic substrate
(900mm2×0.8mm) 1unit
0.8
SOA
10
7
5
IDP=8A (PW≤10μs)
3
2
ID=2A
1.0
7
5
3
DC ope1ra0t0iomns10ms 1m10s0μs
2 Operation in this
area is limited by RDS(on).
0.1
7
5
3 Ta=25°C
2 Single pulse
0.01 When mounted on ceramic substrate (900mm2×0.8mm) 1unit
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
Drain-to-Source Voltage, VDS -- V
5 7 100
HD16714
0.6
0.4
0.2
0
0
20
40
60
80 100 120 140 160
Ambient Temperature, Ta -- °C
1000
7
5
3
2
100 Duty Cycle=0.5
7
5 0.2
3
2
0.1
10 0.05
7
5
0.02
3 0.01
2
HD16715
RθJA -- Pulse Time
1.0
7
5
Single Pulse
3
2
0.1
0.000001 2 3
5 70.00001 2 3
5 7 0.0001 2 3
5 7 0.001 2 3 5 7 0.01
Pulse Time, PT -- s
23
When mounted on ceramic substrate
(900mm2×0.8mm)1unit
5 7 0.1
2 3 5 7 1.0
2 3 5 7 10
HD150106
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4
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