MCH6662-TL-H Просмотр технического описания (PDF) - ON Semiconductor

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MCH6662-TL-H

Power MOSFET 20V, 160mΩ, 2A, Dual N-Channel

ON Semiconductor 

MCH6662

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Gate Threshold Voltage

Forward Transconductance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Forward Diode Voltage

V(BR)DSS

IDSS

IGSS

VGS(th)

gFS

RDS(on)1

RDS(on)2

RDS(on)3

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

ID=1mA, VGS=0V

VDS=20V, VGS=0V

VGS=±8V, VDS=0V

VDS=10V, ID=1mA

VDS=10V, ID=1A

ID=1.0A, VGS=4.5V

ID=0.5A, VGS=2.5V

ID=0.1A, VGS=1.8V

VDS=10V, f=1MHz

See specified Test Circuit.

VDS=10V, VGS=4.5V, ID=2A

IS=2A, VGS=0V

Value

Unit

min

typ

max

20

V

1

mA

±10

mA

0.4

1.3

V

1.9

S

120

160 mW

170

240 mW

255

380 mW

128

pF

28

pF

21

pF

5.1

ns

11

ns

14.5

ns

12

ns

1.8

nC

0.3

nC

0.55

nC

0.85

1.2

V

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be

indicated by the Electrical Characteristics if operated under different conditions.

Switching Time Test Circuit

VIN

4.5V

0V

VIN

PW=10μs

D.C.≤1%

G

VDD=10V

ID=1.0A

RL=10Ω

D

VOUT

MCH6662

P.G

50Ω

S

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