MCH6662-TL-H Просмотр технического описания (PDF) - ON Semiconductor

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MCH6662-TL-H

Power MOSFET 20V, 160mΩ, 2A, Dual N-Channel

ON Semiconductor 

MCH6662

Power MOSFET

20V, 160mΩ, 2A, Dual N-Channel

www.onsemi.com

Features

• ON-Resistance Nch : RDS(on)1=120mW (typ)

• 1.8V Drive

• ESD Diode - Protected Gate

• Pb-Free, Halogen Free and RoHS Compliance

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Power Dissipation

Junction Temperature

VDSS

VGSS

ID

IDP

PD

Tj

Storage Temperature

Tstg

Conditions

PW≤10μs, duty cycle≤1%

When mounted on ceramic substrate (900mm2×0.8mm) 1unit

Value

Unit

20

V

±10

V

2.0

A

8.0

A

0.8

W

150

°C

--55 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

Thermal Resistance Ratings

Parameter

Junction to Ambient

When mounted on ceramic substrate (900mm2×0.8mm) 1unit

Symbol

RθJA

Product & Package Information

• Package

: MCPH6

• JEITA, JEDEC

: SC-88, SC-70-6, SOT-363

• Minimum Packing Quantity : 3,000 pcs./reel

Value

156.25

Unit

°C/W

Packing Type : TL

Marking

XP

TL

Electrical Connection

6

5

4

1

2

3

ORDERING INFORMATION

See detailed ordering and shipping information on page 6 of this data sheet.

©Semiconductor Components Industries, LLC, 2015

1

January 2015 - Rev. 1

Publication Order Number:

MCH6662/D

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