PHP225 Просмотр технического описания (PDF) - NXP Semiconductors.
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PHP225 Datasheet PDF : 12 Pages
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Nexperia
PHP225
Dual P-channel intermediate level FET
104
mda165
1.2
k
1.1
RDSon
(mΩ)
(1)(2)(3)(4) (5)
1.0
103
0.9
mbe138
0.8
0.7
102
0
−2
−4
−6
−8
−10
VGS (V)
-VDS ≥ -ID x RDSon; Tj = 25 °C.
(1) ID = -0.1 A.
(2) ID = -0.5 A.
(3) ID = -1 A.
(4) ID = -2.3 A.
(5) ID= -4.5 A.
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
0.6
−50
0
50
100
150
Tj (°C)
Typical VGSth at ID = 1 mA; VDS = VGS = VGSth.
Fig 9. Temperature coefficient of gate-source
threshold voltage
1.8
mbe146
−6
mbe156
k
IS
1.6
(1)
(A)
1.4
(2)
−4
1.2
(1) (2)
(3)
1.0
−2
0.8
0.6
−50
0
50
100
150
Tj (°C)
0
0
−0.5
−1
−1.5
−2
VSD (V)
Typical RDSon at:
(1) ID = -1 A; VGS = -10 V.
(2) ID = -0.5 A; VGS = -4.5 V.
Fig 10. Temperature coefficient of drain-source
on-state resistance; P-channel
Fig 11. Source current as a function of source-drain
voltage
PHP225
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 17 March 2011
© Nexperia B.V. 2017. All rights reserved
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