PHP225 Просмотр технического описания (PDF) - NXP Semiconductors.
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PHP225 Datasheet PDF : 12 Pages
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Nexperia
PHP225
Dual P-channel intermediate level FET
600
C
(pF)
400
200
0
0
mbe144
Ciss
Coss
Crss
−10
−20 VDS (V) −30
−10 VGS =
ID
−10 V −7.5 V
(A)
−8
mbe154
−6 V
−6
−4
−2
0
0
−5 V
−4.5 V
−4 V
−3.5 V
−3 V
−2.5 V
−2
−4
−6
−8 −10 −12
VDS (V)
Fig 4. Capacitance as a function of drain-source
voltage; P-channel; typical values
−10
ID
(A)
−8
−6
−4
−2
0
0
mbe157
−2
−4
−6
−8
VGS (V)
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; P-channel;
typical values
−10
VGS
(V)
−8
mbe145
−6
−4
−2
0
0
−2
−4
−6
−8
−10
Qg (nC)
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; P-channel;
typical values
Fig 7. Gate-source voltage as a function of gate
charge; P-channel; typical values
PHP225
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 17 March 2011
© Nexperia B.V. 2017. All rights reserved
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