BUK9207-30B Просмотр технического описания (PDF) - NXP Semiconductors.
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BUK9207-30B Datasheet PDF : 14 Pages
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NXP Semiconductors
BUK9207-30B
N-channel TrenchMOS logic level FET
10−1
ID
(A)
10−2
10−3
10−4
10−5
10−6
0
03ng53
min
typ
max
1
2
3
VGS (V)
60
gfs
(S)
40
03nk92
20
0
0
20
40
60
80
ID (A)
Fig 5. Sub-threshold drain current as a function of
gate-source voltage
100
ID
(A)
75
03nk93
50
25
Tj = 185 °C
Tj = 25 °C
0
0
1
2
3
4
5
VGS (V)
Fig 6. Forward transconductance as a function of
drain current; typical values
2.5
VGS(th)
(V)
2.0
1.5
1.0
03no99
max
typ
min
0.5
0.0
−60
10
80
150
220
Tj (°C)
Fig 7. Transfer characteristics: drain current as a
Fig 8. Gate-source threshold voltage as a function of
function of gate-source voltage; typical values
junction temperature
BUK9207-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 16 June 2010
© NXP B.V. 2010. All rights reserved.
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