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BUK9207-30B Datasheet PDF : 14 Pages
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NXP Semiconductors
BUK9207-30B
N-channel TrenchMOS logic level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Conditions
Tj ≥ 25 °C; Tj ≤ 185 °C
RGS = 20 kΩ
Tmb = 25 °C; VGS = 5 V; see Figure 1; [1]
see Figure 3
[2]
Tmb = 100 °C; VGS = 5 V; see Figure 1 [1]
IDM
peak drain current
Tmb = 25 °C; tp ≤ 10 µs; pulsed;
see Figure 3
Ptot
total power dissipation Tmb = 25 °C; see Figure 2
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
IS
source current
Tmb = 25 °C
[3]
[2]
ISM
peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
tp ≤ 10 µs; pulsed; Tmb = 25 °C
ID = 75 A; Vsup ≤ 30 V; RGS = 50 Ω;
VGS = 5 V; Tj(init) = 25 °C; unclamped
[1] Continuous current is limited by package.
[2] Current is limited by power dissipation chip rating.
[3] Continuous current is limited by package.
Min Typ Max Unit
-
-
30 V
-
-
30 V
-15 -
15 V
-
-
75 A
-
-
112 A
-
-
75 A
-
-
449 A
-
-
-55 -
-55 -
167 W
185 °C
185 °C
-
-
75 A
-
-
112 A
-
-
449 A
-
-
329 mJ
BUK9207-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 16 June 2010
© NXP B.V. 2010. All rights reserved.
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