6V62160E Просмотр технического описания (PDF) - LAPIS Semiconductor Co., Ltd.

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6V62160E

4-Bank x 1,048,576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM

LAPIS Semiconductor Co., Ltd. 

FEDD56V62160E-07

MD56V62160E

AC Characteristics (2/2)

Parameter

Symbol

MD56V62160 E-10

Note1, 2

Unit Note

Data Input Mask Time from Write

Command

lDWD

0

Cycle

Data Output High Impedance Time

from Precharge Command

lROH

CL

Cycle

Active Command Input Time from

Mode Register Set Command Input lMRD

2

Cycle

(Min.)

Write Command Input Time from

Output

lOWD

2

Cycle

Notes: 1. AC measurements assume that tT = 1 ns.

2. The reference level for timing of input signals is 1.4 V.

The input signal conditions are below.

VIH = 2.4 V, VIL = 0.4 V

3. Output load.

Output

Z = 50

50 pF (External Load)

4. The access time is defined at 1.4 V.

5. If tT is longer than 1 ns, then the reference level for timing of input signals is VIH and VIL.

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