ESDALC5-4BN4 Просмотр технического описания (PDF) - STMicroelectronics
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ESDALC5-4BN4
STMicroelectronics
ESDALC5-4BN4 Datasheet PDF : 10 Pages
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ESDALC5-4BN4
Characteristics
Figure 3.
IR (nA)
100
10
1
0,1
0,01
25
Leakage current versus junction
temperature (typical values)
Figure 4.
Junction capacitance versus
reverse voltage applied
(typical values)
15 C (PF)
Vr=5V
14
IO/GND
13
GND/IO
12
11
10
TJ=25°C
IO/GND
IO/IO
9
8
7
6
5
4
3
2
Tj(°C)
1
VR(V)
0
50
75
100
125
150
0
1
2
3
4
5
6
Figure 5. ESD response to IEC 61000-4-2
(+8 kV contact discharge)
10 V/div
41 V
17 V 18 V
14 V
Figure 6. ESD response to IEC 61000-4-2
(-8 kV contact discharge)
10 V/div
-8 V
-11 V -12 V
-36 V
30 nS 60 nS
100 nS
20 ns/div
30 nS 60 nS
100 nS
20 ns/div
Figure 7. S21 attenuation measurements
Figure 8. Analog crosstalk measurements
between channels
0 S21 (dB)
-3
-6
-9
-12
-15
Average
-18
Performance
(50 Ω System)
-21
Pass band
attenuation
0.05 dB
-24
3-dB point
484 MHz
-27
-30
Attenuation
>6 dB
7 dB @ 900 MHz
(0.8– 4GHz) 15 dB @ 1.8 GHz
-33
-36
100k
1M
10M
100M
0 dB
-10
Average
-20
Performance
(50 Ω System)
-30
Attenuation
@ 1MHz
100 dB
-40
-50
Attenuation
@ 100MHz
66 dB
Min
-60
Attenuation 33 dB @ 6 GHz
@ Hz
-70
-80
-90
-100
-110
F/Hz
-120
1G
10G
100k
1M
10M
100M
F/Hz
1G
10G
Doc ID 023686 Rev 1
3/10
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