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ESDALC5-4BN4 Просмотр технического описания (PDF) - STMicroelectronics

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ESDALC5-4BN4 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Characteristics
1
Characteristics
ESDALC5-4BN4
Table 1.
Symbol
Absolute maximum ratings (Tamb = 25 °C)
Parameter
Peak pulse voltage, IEC 61000-4-2, level 4:
VPP
Contact discharge
Air discharge
Ipp Peak pulse current (8/20 µs)
PPP Peak pulse power dissipation (8/20 µs)(1)
GND to I/O
Tj Operating junction temperature range
Tstg Storage temperature range
TL Maximum lead temperature for soldering during 10 s
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Figure 2. Electrical characteristics (definitions)
Symbol
VBR
=
VCL
=
IRM
=
VRM
=
IPP
=
Parameter
Breakdown voltage
Clamping voltage
Leakage current @ VRM
Stand-off voltage
Peak pulse current
Value
Unit
30
kV
30
4
A
60
W
-40 to 125
°C
-65 + 150
°C
260
°C
Table 2. Electrical characteristics (values, Tamb = 25 °C)
Symbol
Test conditions
Min. Typ. Max. Unit
VBR
IRM
VCL
CLINE
IR = 1 mA, I/O to GND
IR = 1 mA, GND to I/O
VRM = 5 V
Ipp = 1 A, 8/20 µs, I/O to GND
Ipp = 1 A, 8/20 µs, GND to I/O
VR = 0 V, F = 1 MHz, Vosc = 30 mV
11
13
V
5.5
8
1
60
nA
18
V
14.5
13 15
pF
2/10
Doc ID 023686 Rev 1

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