VS-111MT100KPBF Просмотр технического описания (PDF) - Vishay Semiconductors
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VS-111MT100KPBF Datasheet PDF : 9 Pages
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VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
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Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum DC output current at
case temperature
IO
Maximum peak, one-cycle
forward, non-repetitive on state
ITSM
surge current
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Low level value of threshold
voltage
High level value of threshold
voltage
Low level value on-state slope
resistance
High level value on-state slope
resistance
Maximum on-state voltage drop
Maximum non-repetitve
rate of rise of turned on current
Maximum holding current
Maximum latching current
I2t
VT(TO)1
VT(TO)2
rt1
rt2
VTM
dI/dt
IH
IL
TEST CONDITIONS
120° rect. conduction angle
t = 10 ms No voltage
t = 8.3 ms reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Initial TJ = TJ max.
t = 10 ms 100 % VRRM
t = 8.3 ms reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum
(I > x IT(AV)), TJ maximum
VALUES
5.MT...K
55
85
390
410
330
345
770
700
540
500
7700
VALUES
9.MT...K
90
85
950
1000
800
840
4525
4130
3200
2920
45 250
VALUES
11.MT...K
110
85
1130
1180
950
1000
6380
5830
4510
4120
63 800
UNITS
A
°C
A
A2s
A2s
1.17
1.09
1.04
V
1.45
1.27
1.27
(16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum
12.40
(I > x IT(AV)), TJ maximum
Ipk = 150 A, TJ = 25 °C, tp = 400 μs single junction
TJ = 25 °C, from 0.67 VDRM, ITM = x IT(AV),
Ig = 500 mA, tr < 0.5 μs, tp > 6 μs
TJ = 25 °C, anode supply = 6 V, resistive load,
gate open circuit
TJ = 25 °C, anode supply = 6 V, resistive load
11.04
2.68
4.10
3.59
1.65
150
200
400
3.93
m
3.37
1.57
V
A/μs
mA
BLOCKING
PARAMETER
SYMBOL
RMS isolation voltage
Maximum critical rate of rise of
off-state voltage
VISOL
dV/dt (1)
TEST CONDITIONS
TJ = 25 °C all terminal shorted, f = 50 Hz, t = 1 s
TJ = TJ maximum, linear to 0.67 VDRM,
gate open circuit
5.MT...K
Note
(1) Available with dV/dt = 1000 V/μs, to complete code add S90 i. e. 113MT160KBS90
9.MT...K
4000
500
11.MT...K UNITS
V
V/μs
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative
gate voltage
PGM
PG(AV)
IGM
- VGT
Maximum required DC gate
voltage to trigger
VGT
Maximum required DC gate
current to trigger
IGT
Maximum gate voltage
that will not trigger
VGD
Maximum gate current
that will not trigger
IGD
TEST CONDITIONS
TJ = TJ maximum
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
Anode supply = 6 V,
resistive load
TJ = TJ maximum, rated VDRM applied
5.MT...K
9.MT...K
10
2.5
2.5
11.MT...K UNITS
W
A
10
4.0
V
2.5
1.7
270
150
mA
80
0.25
V
6
mA
Revision: 27-Feb-14
2
Document Number: 94353
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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