VS-111MT100KPBF Просмотр технического описания (PDF) - Vishay Semiconductors
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VS-111MT100KPBF Datasheet PDF : 9 Pages
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VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
www.vishay.com
Vishay Semiconductors
10
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 30 Ω;
tr = 0.5 μs, tp ≥ 6 μs
1
b) Recommended load line for
≤ 30 % rated dI/dt: 20 V, 65 Ω
tr = 1 μs, tp ≥ 6 μs
(a)
(b)
(1) PGM = 100 W, tp = 500 μs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
0.1
VGD
(4) (3) (2) (1)
0.01
0.001
IGD
0.01
5.MT...K, 9.MT...K, 11.MT...K Series
0.1
1
Frequency Limited by PG(AV)
10
100
94353_17
Instantaneous Gate Current (A)
Fig. 17 - Gate Characteristics
ORDERING INFORMATION TABLE
1000
Device code
VS- 11 3 MT 160 K S90 PbF
1
2
3
4
5
6
7
1 - Vishay Semiconductors product
2 - Current rating code:
5 = 55 A (average)
9 = 90 A (average)
11 = 110 A (average)
3 - Circuit configuration code:
1 = Negative half-controlled bridge
2 = Positive half-controlled bridge
3 = Full-controlled bridge
4 - Essential part number
5 - Voltage code x 10 = VRRM (see Voltage Ratings table)
6 - Critical dV/dt:
None = 500 V/µs (standard value)
S90 = 1000 V/µs (special selection)
7 - PbF = Lead (Pb)-free
Note
• To order the optional hardware go to www.vishay.com/doc?95172
CIRCUIT CONFIGURATION
A
B
C
A
B
C
A
64 3
1 25
1 25
D
E
F
D
E
F
D
Full-controlled bridge
(5.MT...K, 9.MT...K, 11.MT..K)
Positive half-controlled bridge
(5.MT...K, 9.MT...K, 11.MT..K)
B
C
64
3
E
F
Negative half-controlled bridge
(5.MT...K, 9.MT...K, 11.MT..K)
Dimensions
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95004
Revision: 27-Feb-14
7
Document Number: 94353
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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