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VS-111MT100KPBF Просмотр технического описания (PDF) - Vishay Semiconductors

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VS-111MT100KPBF Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
www.vishay.com
Vishay Semiconductors
300
9.MT..K Series
250 TJ = 125 °C
200
120°
150
(Rect.)
100
50
300
250
200
0.4
0.2
0.3 K/W
K/W
K/W
150
0.5 K/W
100
1.0
0.7 K/W
K/W
1.5 K/W
50
0
0 10 20 30 40 50 60 70 80 90
0
0
25
50
75
100
125
94353_08a
Total Output Current (A)
94353_08b
Maximum Allowable Ambient
Temperature (°C)
Fig. 8 - Total Power Loss Characteristics
850
At any rated load condition and with
800
rated VRRM applied following surge.
Initial TJ = 125 °C
750
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
700
650
600
550
500
450
9.MT..K Series
Per junction
400
1
10
100
94353_09
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 9 - Maximum Non-Repetitive Surge Current
1000
900
800
700
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
Initial TJ = 125 °C
No voltage reapplied
Rated VRRM reapplied
600
500
400 9.MT..K Series
Per junction
300
0.01
0.1
1
94353_10
Pulse Train Duration (s)
Fig. 10 - Maximum Non-Repetitive Surge Current
130
11.MT..K Series
120
120°
110
(Rect.)
100
+
90 ~
80
0
-
20
40
60
80 100 120
94353_11
Total Output Current (A)
Fig. 11 - Current Ratings Characteristic
1000
100
TJ = 25 °C
10
TJ = 125 °C
11.MT..K Series
Per junction
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
94353_12
Instantaneous On-State Voltage (V)
Fig. 12 - Forward Voltage Drop Characteristics
Revision: 27-Feb-14
5
Document Number: 94353
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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