VS-T110HF10 Просмотр технического описания (PDF) - Vishay Semiconductors
Номер в каталоге
Компоненты Описание
Список матч
VS-T110HF10 Datasheet PDF : 11 Pages
| |||
VS-T40HF..., VS-T70HF..., VS-T85HF..., VS-T110HF... Series
www.vishay.com
Vishay Semiconductors
1600
1400
1200
At Any Ra ted Loa d Cond ition And With
Ra ted VRRM App lied Following Surge.
Initial TJ= 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1000
800
600
T85HF.. Series
400
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 17 - Maximum Non-Repetitive Surge Current
150
T110HF.. Series
140
R thJC (DC) = 0.47 K/ W
130
120
Conduc tion Angle
110
100
90
30° 60°
80
90°
120°
70
180°
60
0 20 40 60 80 100 120
Average Forward Current (A)
Fig. 19 - Current Ratings Characteristics
1800
1600
1400
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ = 150°C
No Voltage Reapplied
Rated VRRM Reapplied
1200
1000
800
600 T85HF.. Series
400
0.01
0.1
1
Pulse Train Duration (s)
Fig. 18 - Maximum Non-Repetitive Surge Current
150
T110HF.. Series
140
R thJC (DC) = 0.47 K/ W
130
120
Conduc tion Period
110
100
90
30°
60°
80
90°
120°
70
180° DC
60
0 20 40 60 80 100 120 140 160 180
Average Forward Current (A)
Fig. 20 - Current Ratings Characteristics
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0
180°
120°
90°
60°
30°
RMSLimit
0.7
0.5 K/
K/ W
W
1 K/ W
1.5 K/ W
2 K/ W
Conduc tion Angle
T110HF.. Series
TJ= 150°C
3 K/ W
5 K/ W
20 40 60 80 100 1200 25 50 75 100 125 150
Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)
Fig. 21 - Forward Power Loss Characteristics
Revision: 20-Dec-16
7
Document Number: 93587
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Share Link: 