VS-T110HF10 Просмотр технического описания (PDF) - Vishay Semiconductors
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VS-T110HF10 Datasheet PDF : 11 Pages
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VS-T40HF..., VS-T70HF..., VS-T85HF..., VS-T110HF... Series
www.vishay.com
Vishay Semiconductors
90
80
70
60
50
40
30
20
10
0
0
180°
120°
90°
60°
30°
RMSLimit
1
K/
0.7
W
K/
W
1.5 K/ W
2 K/ W
3 K/ W
Conduc tion Angle 5 K/W
T70HF.. Series
TJ= 150°C
7 K/ W
10 20 30 40 50 60 700 25 50 75 100 125 150
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 9 - Forward Power Loss Characteristics
120
DC
180°
100 120°
90°
80
60°
30°
60 RMSLimit
40
20
Conduc tion Period
T70HF.. Series
TJ = 150°C
0.07.K5K/W/0W.3K/ W
1K/ W
1.5K/ W
2K/ W
3K/ W
5K/ W
0
0 20 40 60 80 100 1200 25 50 75 100 125 150
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 10 - Forward Power Loss Characteristics
1100
1000
900
800
At Any Ra ted Loa d Cond ition And With
Rated VRRM App lied Following Surge.
Initial TJ= 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
700
600
500
400 T70HF.. Series
300
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 11 - Maximum Non-Repetitive Surge Current
1200
1100
1000
900
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ = 150°C
No Voltage Reapplied
Rated V RRM Reapplied
800
700
600
500
400
300 T70HF.. Series
200
0.01
0.1
1
Pulse Train Duration (s)
Fig. 12 - Maximum Non-Repetitive Surge Current
Revision: 20-Dec-16
5
Document Number: 93587
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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