015N04N Просмотр технического описания (PDF) - Infineon Technologies
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015N04N Datasheet PDF : 10 Pages
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Parameter
Symbol Conditions
IPP015N04N G
IPB015N04N G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
Crss
V GS=0 V, V DS=20 V,
f =1 MHz
-
15000 20000 pF
-
4000 5300
-
160
-
t d(on)
-
40
- ns
tr
V DD=20 V, V GS=10 V,
-
10
-
t d(off)
I D=30 A, R G=1.6 Ω
-
64
-
tf
-
13
-
Gate Charge Characteristics6)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Q gs
-
Q g(th)
-
Q gd
V DD=20 V, I D=100 A,
-
Q sw
V GS=0 to 10 V
-
Qg
-
V plateau
-
Q g(sync)
V DS=0.1 V,
V GS=0 to 10 V
-
Q oss
V DD=20 V, V GS=0 V
-
76
- nC
46
-
23
-
75
-
188
250
5.0
-V
177
- nC
147
-
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
IS
I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=100 A,
T j=25 °C
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
-
-
120 A
-
-
400
-
0.88
1.2 V
-
141
- nC
6) See figure 16 for gate charge parameter definition
Rev. 2.2
page 3
2009-11-16
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