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015N04N

OptiMOS™3 Power-Transistor

Infineon Technologies 

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Power dissipation

P tot

T C=25 °C

Operating and storage temperature T j, T stg

IEC climatic category; DIN IEC 68-1

IPP015N04N G

IPB015N04N G

Value

Unit

250

W

-55 ... 175

°C

55/175/56

Parameter

Symbol Conditions

min.

Values

typ.

Unit

max.

Thermal characteristics

Thermal resistance, junction - case R thJC

-

SMD version, device on PCB

R thJA minimal footprint

-

6 cm² cooling area4)

-

-

0.6 K/W

-

62

-

40

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=1 mA

40

-

Gate threshold voltage

V GS(th) V DS=V GS, I D=200 µA

2

-

Zero gate voltage drain current

I DSS

V DS=40 V, V GS=0 V,

T j=25 °C

-

0.1

-V

4

2 µA

V DS=40 V, V GS=0 V,

T j=125 °C

-

20

200

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

-

Drain-source on-state resistance 5) R DS(on) V GS=10 V, I D=100 A

-

Gate resistance

RG

-

10

100 nA

1.2

1.5 mΩ

1.5

-Ω

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=100 A

120

230

-S

4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

5) Measured from drain tab to source pin

Rev. 2.2

page 2

2009-11-16

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