IRHN4450 Просмотр технического описания (PDF) - International Rectifier

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IRHN4450

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)

International Rectifier 

Radiation

Characteristics

IRHN7450, IRHN8450, JANSR-, JANSH-, 2N7270U Devices

Note: Bias Conditions during radiation: VGS = 0 Vdc, VDS = 400 Vdc

Fig 14. Typical Output Characteristics

Pre-Irradiation

Fig 15. Typical Output Characteristics

Post-Irradiation 100K Rads (Si)

Fig 16. Typical Output Characteristics

Post-Irradiation 300K Rads (Si)

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Fig 17. Typical Output Characteristics

Post-Irradiation 1 Mega Rads(Si)

7

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