IRHN4450 Просмотр технического описания (PDF) - International Rectifier

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IRHN4450

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)

International Rectifier 

IRHN7450, IRHN8450, JANSR-, JANSH-, 2N7270U Devices

Pre-Irradiation

Fig 26. Maximum Drain Current Vs.

Case Temperature

VDS

VGS

RG

RD

D.U.T.

12V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

+-V D D

Fig 27a. Switching Time Test Circuit

VDS

90%

10%

VGS

td(on) tr

td(off) tf

Fig 27b. Switching Time Waveforms

Fig 28. Maximum Effective Transient Thermal Impedance, Junction-to-Case

10

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