IRHN4450 Просмотр технического описания (PDF) - International Rectifier
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IRHN4450 Datasheet PDF : 12 Pages
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IRHN7450, IRHN8450, JANSR-, JANSH-, 2N7270U Devices
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage 500
∆BVDSS/∆TJ Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
—
VGS(th)
Gate Threshold Voltage
2.0
gfs
Forward Transconductance
4.0
IDSS
Zero Gate Voltage Drain Current
—
—
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
—
Gate-to-Source Leakage Reverse
—
Total Gate Charge
—
Gate-to-Source Charge
—
Gate-to-Drain (‘Miller’) Charge
—
Turn-On Delay Time
—
Rise Time
—
Turn-Off Delay Time
—
Fall Time
—
Internal Drain Inductance
—
LS
Internal Source Inductance
—
Ciss
Input Capacitance
—
Coss
Output Capacitance
—
Crss
Reverse Transfer Capacitance
—
Typ Max Units
——
V
0.6 — V/°C
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
— 0.45
— 0.50
— 4.0
——
— 50
— 250
— 100
— -100
— 150
— 30
— 75
— 45
— 190
— 190
— 130
2.0 —
4.1 —
4000 —
330 —
52 —
Ω
V
S( )
µA
nA
nC
VGS = 12V, ID = 7.0A
VGS = 12V, ID = 11A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 7.0A
VDS= 0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 11A
VDS = Max Rating x 0.5
VDD = 250V, ID = 11A,
ns
RG = 2.35Ω
nH
pF
Measured from drain Modified MOSFET sym-
lead, 6mm (0.25 in) bol showing the internal
from package to center inductances.
of die.
Measured from source
lead, 6mm (0.25 in)
from package to
source bonding pad.
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode) — — 11
ISM Pulse Source Current (Body Diode)
— — 44
A Modified MOSFET symbol
showing the integral reverse
p-n junction rectifier.
VSD Diode Forward Voltage
trr Reverse Recovery Time
QRR Reverse Recovery Charge
— — 1.6 V
— — 1100 ns
— — 16 µC
Tj = 25°C, IS =11A, VGS = 0V
Tj = 25°C, IF = 11A, di/dt ≤ 100A/µs
VDD ≤ 50V
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max Units
Test Conditions
— — 0.83 °C/W
— 6.6 —
Soldered to a 1 inch square clad PC board
2
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