UT62L12816BSL-100LLI Просмотр технического описания (PDF) - Utron Technology Inc

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UT62L12816BSL-100LLI

128K X 16 BIT LOW POWER CMOS SRAM

Utron Technology Inc 



Rev. 1.1

UTRON

UT62L12816(I)

128K X 16 BIT LOW POWER CMOS SRAM

DATA RETENTION CHARACTERISTICS (TA = -40℃ to 85℃)

PARAMETER

Vcc for Data Retention

Data Retention Current

Chip Disable to Data

Retention Time

Recovery Time

SYMBOL

VDR

IDR

tCDR

tR

TEST CONDITION

CE ≧VCC-0.2V

Vcc=1.5V

CE ≧VCC-0.2V

See Data Retention

Waveforms (below)

MIN.

1.5

-L

-

- LL -

0

5

TYP.

-

-

-

-

MAX.

3.6

50

5

-

UNIT

V

µA

µA

ms

-

-

ms

DATA RETENTION WAVEFORM

Low Vcc Data Retention Waveform (1) ( CE controlled)

VCC

CE

Vcc(min.)

tCDR

VIH

VDR ≧ 1.5V

CE ≧ VCC-0.2V

Vcc(min.)

tR

VIH

Low Vcc Data Retention Waveform (2) ( LB , UB controlled)

VCC

LB,UB

Vcc(min.)

tCDR

VIH

VDR ≧ 1.5V

LB,UB ≧ VCC-0.2V

Vcc(min.)

tR

VIH

UTRON TECHNOLOGY INC.

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

9

P80049

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