UT62L12816BSL-100LLI Просмотр технического описания (PDF) - Utron Technology Inc

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UT62L12816BSL-100LLI

128K X 16 BIT LOW POWER CMOS SRAM

Utron Technology Inc 



Rev. 1.1

UTRON

UT62L12816(I)

128K X 16 BIT LOW POWER CMOS SRAM

FEATURES

GENERAL DESCRIPTION

Fast access time :

55ns (max.) for Vcc=2.7V~3.6V

70/100ns (max.) for Vcc=2.5V~3.6V

CMOS low power operating

Operating current : 35/30/25mA (Icc max.)

Standby current :

20uA(max.) L–version,0℃≦TA≦50℃

3uA(max.) LL-version,0℃≦TA≦50℃

Single 2.5V~3.6V power supply

Operating temperature:

Industrial : -40℃~85℃

All TTL compatible inputs and outputs

Fully static operation

Three state outputs

Data retention voltage : 1.5V (min.)

Data byte control : LB (I/O1~I/O8)

UB (I/O9~I/O16)

Package : 44-pin 400mil TSOP-Ⅱ

48-pin 6mm × 8mm TFBGA

The UT62L12816(I) is a 2,097,152-bit low power CMOS

static random access memory organized as 131,072

words by 16 bits.

The UT62L12816(I) operates from a wide range of

2.5V~ 3.6V supply voltage and all inputs and outputs

are fully TTL compatible.

The UT62L12816(I) is designed for low power system

applications.

FUNCTIONAL BLOCK DIAGRAM

A0-A16

Vcc

Vss

I/O1-I/O8

Lower Byte

I/O9-I/O16

Upper Byte

DECODER

I/O DATA

CIRCUIT

128K× 16

MEMORY

ARRAY

COLUMN I/O

CE

OE

CONTROL

WE

CIRCUIT

LB

UB

UTRON TECHNOLOGY INC.

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

2

P80049

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