UT62L12816BSL-100LLI Просмотр технического описания (PDF) - Utron Technology Inc

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UT62L12816BSL-100LLI

128K X 16 BIT LOW POWER CMOS SRAM

Utron Technology Inc 



Rev. 1.1

UTRON

UT62L12816(I)

128K X 16 BIT LOW POWER CMOS SRAM

REVISION HISTORY

REVISION

Preliminary Rev. 0.5

Preliminary Rev. 0.6

Preliminary Rev. 0.7

Rev. 1.0

Rev. 1.1

Original.

DESCRIPTION

1. The symbols CE# and OE# and WE# are revised as. CE

and OE and WE .

2. Separate Industrial and Consumer SPEC.

3. Add access time 55ns range.

1. Revised Vcc range：

a、 55ns (max.) for Vcc=2.7V~3.6V

b、 70/100ns (max.) for Vcc=2.5V~3.6V

2. Revised block diagram

3. Revised DC ELECTRICAL CHARACTERISTICS：

c、 Revised standby current

ISB1=20/3uA(max.) for TA=0℃~50℃

ISB2=80/10uA(max.) for TA=-40℃~85℃

d、 Revised Icc=35/30/25mA(max.)

4. Revised AC ELECTRICAL CHARACTERISTICS：

e、 Revised symbol name tHZB as tBHZ

f、 Revised symbol name tLZB as tBLZ

g、 Revised symbol name tPWB as tBW

5. Revised waveforms

6. Revised IDR=50/5uA(max.)

1. Revised DC ELECTRICAL CHARACTERISTICS：

a、 Revised VIH as 2.2V

2. Revised AC ELECTRICAL CHARACTERISTICS：

b、 Revised tBLZ as 10ns (min.)

3. Revised 48-pin TFBGA package outline dimension：

c、 Rev. 0.7：ball diameter=0.3mm

d、 Rev. 1.0：ball diameter=0.35mm

Add order information for lead free product

DATE

Mar, 2001

Jun 21,2001

Nov 6, 2001

Apr 23,2002

May 09,2003

UTRON TECHNOLOGY INC.

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

1

P80049

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