S6A13 Просмотр технического описания (PDF) - Toshiba
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S6A13 Datasheet PDF : 4 Pages
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IGT (Tc)/IGT (Tc = 25°C) – Tc
2.5
2.0
(typical)
VD = 6 V
RL = 10 W
1.5
1.0
0.5
0.0
-60
-20
20
60
100
140
Case temperature Tc (°C)
S6A13
VGT (Tc)/VGT (Tc = 25°C) – Tc
2.0
1.5
(typical)
VD = 6 V
RL = 10 W
1.0
0.5
0.0
-60
-20
20
60
100
140
Case temperature Tc (°C)
IH (Tc)/IH (Tc = 25°C) – Tc
2.5
2.0
(typical)
VD = 6 V
ITM = 1 A
1.5
1.0
0.5
0.0
-60
-20
20
60
100
140
Case temperature Tc (°C)
Pulse trigger characteristics
(typical)
5
Resistance load
VD = 6 V
4
RL = 10 W
Tc = 25°C
Rectangular waveform
3
iGT
tw
2
1
0
0.1
1
10
100
Gate trigger pulse width tw (ms)
iT – vT (thyristor)
1000
iF – vF (diode)
1000
100
100
10
Tj = 125°C
25°C
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Instantaneous ON-state voltage vT (V)
10
Tj = 125°C 25°C
1
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Instantaneous forward voltage vF (V)
3
2002-01-23
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