S6A13 Просмотр технического описания (PDF) - Toshiba
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S6A13 Datasheet PDF : 4 Pages
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Electrical Characteristics (Ta = 25°C)
Characteristics
Repetitive peak OFF-state current
Peak ON-state voltage (thyristor)
Peak forward voltage (diode)
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Critical rate of rise of OFF-state voltage
Holding current
Thermal resistance (junction to ambient)
Symbol
IDRM
VTM
VFM
VGT
IGT
VGD
dv/dt
IH
Rth (j-a)
Test Condition
VDRM = Rated
ITM = 25 A
IFM = 25 A
VD = 6 V, RL = 10 W
VD = Rated, Tc = 125°C
VDRM = Rated, Tc = 125°C
Exponential Rise
VD = 6 V, ITM = 1 A
DC
S6A13
Min Typ. Max Unit
¾
¾
10
mA
¾
¾
1.5
V
¾
¾
2.0
V
¾
¾
1.0
V
¾
¾
30
mA
0.2
¾
¾
V
¾
50
¾ V/ms
¾
¾
35
mA
¾
¾
70 °C/W
0.5 IP
IP
Test Circuit Examples
R
L
t
tw = 2 ms
di/dt = 0.5 IP
t
Equivalent Circuit
ANODE
tw = p LC , IP =
VD
L/C
GATE
CATHODE
2
2002-01-23
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