S6A13 Просмотр технического описания (PDF) - Toshiba
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S6A13 Datasheet PDF : 4 Pages
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TOSHIBA Thyristor Silicon Planar Type
S6A13
Condenser Discharge Control Applications
S6A13
Unit: mm
· FWD included between cathode and anode
· Critical rate of rise of ON-state current: di/dt = 750 A/µs
· Repetitive peak surge ON-state current: ITRM = 500 A (tw = 2 µs)
· Repetitive peak OFF-state voltage: VDRM = 800 V
· Gate trigger current: IGT = 30 mA max.
Maximum Ratings
Characteristics
Symbol
Rating
Unit
Repetitive peak OFF-state voltage
Repetitive peak surge ON-state
current
(Note)
Repetitive peak surge forward current
(Note)
Critical rate of rise of ON-state current
(Note)
Peak gate power dissipation
Average gate power dissipation
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Junction temperature
Storage temperature range
VDRM
ITRM
IFRM
di/dt
PGM
PG (AV)
VFGM
VRGM
IGM
Tj
Tstg
800
500
500
750
5
0.5
10
-5
2
-40~125
-40~150
V
A
A
A/ms
W
W
V
V
A
°C
°C
Note: VD <= 0.8 ´ rated, Tc = 85°C, igp >= 60 mA, tgw >= 10 ms, tgr <= 150 ns
Marking
JEDEC
―
JEITA
―
TOSHIBA
13-10J1B
Weight: 1.5 g (typ.)
※1
※2
※1
MARK
S6A13
TYPE NAME
S6A13
Lot Number
※2
Month (starting from alphabet A)
Year (last decimal digit of the current year)
1
2002-01-23
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