MJE16002 Просмотр технического описания (PDF) - ON Semiconductor

Номер в каталоге

Компоненты Описание

Список матч

MJE16002

SWITCHMODE Series NPN Silicon Power Transistors

ON Semiconductor 

MJE16002 MJE16004

0

≈ – 35 V

Table 2. Inductive Load Switching

H.P. 214

or Equiv.

P.G.

0.02 µF

100

20

+

10 µF

–

0.02 µF

1.0 µF

50

+–

+ V ≈ 11 V

2N6191

RB1

A

RB2

2N5337

500

100

–V

T1

+V

0V

–V

A

[ T1

Lcoil (ICpk)

VCC

*IB

50

T1 adjusted to obtain IC(pk)

VCEO(sus)

L = 10 mH

RB2 = ∞

VCC = 20 Volts

*Tektronix

*P–6042 or

*Equivalent

Inductive Switching

L = 200 µH

RB2 = 0

VCC = 20 Volts

RB1 selected for desired IB1

Scope — Tektronix

7403 or

Equivalent

*IC

T.U.T.

L

MR856

Vclamp

IC

VCE(pk)

VCE

IB

VCC

RBSOA

L = 200 µH

RB2 = 0

VCC = 20 Volts

RB1 selected for desired IB1

Note: Adjust – V to obtain desired VBE(off) at Point A.

IC(pk)

IB1

IB2

TYPICAL INDUCTIVE SWITCHING WAVEFORMS

tsv

IC(pk) = 3.0 Amps

IB1 = 0.3 Amp

VBE(off) = 5.0 Volts

VCE(pk) = 300 Volts

TC = 25°C

Time Base =

20 ns/cm

tfi, tc

IC(pk) = 3.0 Amps

IB1 = 0.3 Amp

VBE(off) = 5.0 Volts

VCE(pk) = 300 Volts

TC = 25°C

Time Base =

20 ns/cm

8

Motorola Bipolar Power Transistor Device Data

Share Link: