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MJE16002

SWITCHMODE Series NPN Silicon Power Transistors

ON Semiconductor 

SAFE OPERATING AREA INFORMATION

MJE16002 MJE16004

FORWARD BIAS

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 16 is based on TC = 25_C; TJ(pk) is vari-

able depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated

when TC ≥ 25_C. Second breakdown limitations do not der-

ate the same as thermal limitations. Allowable current at the

voltages shown on Figures 17 and 18 may be found at any

case temperature by using the appropriate curve on Figure

20.

TJ(pk) may be calculated from the data in Figure 15. At

high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be

sustained simultaneously during turn–off, in most cases, with

the base–to–emitter junction reverse biased. Under these

conditions the collector voltage must be held to a safe level

at or below a specific value of collector current. This can be

accomplished by several means such as active clamping,

RC snubbing, load line shaping, etc. The safe level for these

devices is specified as Reverse Bias Safe 0perating Area

and represents the voltage–current condition allowable pull-

ing reverse biased turn–off. This rating is verified under

clamped conditions so that the device is never subjected to

an avalanche mode. Figure 17 gives the RBSOA character-

istics.

td and tr

H.P. 214

or Equiv.

P.G.

*IB

RB = 33 Ω

50

Vin

0V

≈ 11 V

tr ≤ 15 ns

Table 1. Resistive Load Switching

ts and tf

*IC

T.U.T.

RL

VCC

VCC = 250 Vdc

RL = 83 Ω

IC = 3.0 Adc

IB = 0.3 Adc

0V

≈ – 35 V

H.P. 214

or Equiv.

P.G.

50

20 100

+

– 10 µF

0.02 µF

0.02 µF

1.0 µF

500

100

+V

0V

–5 V

A

50

*IB

T.U.T.

*IC

+ Vdc ≈ 11 Vdc

2N6191

RB1

A

RB2

2N5337

–V

RL

VCC

*Tektronix

*P–6042 or

*Equivalent

VCC = 250

RL = 83 Ω

IC = 3.0 Adc

IB1 = 0.3 Adc

IB2 = 0.6 Adc

For VBE(off) = 5.0 V

RB1 = 33 Ω

RB2 = 8.0 Ω

RB2 = 0 Ω

Note: Adjust – V to obtain desired VBE(off) at Point A.

Motorola Bipolar Power Transistor Device Data

7

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