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MJE16002

SWITCHMODE Series NPN Silicon Power Transistors

ON Semiconductor 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ SWITCHING CHARACTERISTICS (continued)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristics

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Inductive Load (Table 2) MJE16002

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Fall Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Crossover Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Fall Time

(IC = 3.0 Adc,

IB1 = 0.4 Adc,

VBE(off) = 5.0 Vdc,

VCE(pk) = 400 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Crossover Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Inductive Load (Table 2) MJE16004

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Fall Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Crossover Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Fall Time

(IC = 3.0 Adc,

IB1 = 0.3 Adc,

VBE(off) = 5.0 Vdc,

VCE(pk) = 400 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Crossover Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v (1) Pulse Test: PW = 300 µs, Duty Cycle 2%.

MJE16002 MJE16004

Symbol

Min

Typ

Max

Unit

tsv

(TJ = 100_C)

tfi

tc

tsv

(TJ = 150_C)

tfi

tc

tsv

(TJ = 100_C)

tfi

tc

tsv

(TJ = 150_C)

tfi

tc

—

500

1600

ns

—

100

200

—

120

250

—

600

—

—

120

—

—

160

—

—

400

1300

ns

—

80

150

—

90

200

—

450

—

—

100

—

—

110

—

*βf =

IC

IB1

60

50

30

20

10

7.0

5.0

3.0

0.1

TJ = 100°C

25°C

– 55°C

VCE = 5.0 V

0.2 0.3 0.5 0.7 1.0 2.0 3.0

IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain

5.0 7.0 10

2.0

IC = 1 A

2A

3A 4A 5A

1.0

0.7

0.5

0.3

0.2 TJ = 25°C

0.1

0.03 0.05 0.07 0.1

0.2 0.3 0.5 0.7 1.0

IB, BASE CURRENT (AMPS)

2.0 3.0

Figure 2. Collector Saturation Region

5.0

3.0

2.0

1.0

βf = 10

TJ = 100°C

0.5

βf = 10

TJ = 25°C

0.2

βf = 5

TJ = 25°C

0.1

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

IC, COLLECTOR CURRENT (AMPS)

Figure 3. Collector–Emitter Saturation Region

3.0

2.0

1.5

1.0

βf = 5

TJ = 25°C

0.7

0.5

βf = 10

TJ = 100°C

0.3

0.1

0.2

0.5

1.0

2.0

5.0

10

IC, COLLECTOR CURRENT (AMPS)

Figure 4. Base–Emitter Voltage

Motorola Bipolar Power Transistor Device Data

3

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