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PHD16N03T

TrenchMOS™ standard level FET

Philips Electronics 

Philips Semiconductors

PHD16N03T

TrenchMOS™ standard level FET

5. Characteristics

Table 4: Characteristics

Tj = 25 °C unless otherwise specified.

Symbol Parameter

Conditions

Static characteristics

V(BR)DSS drain-source breakdown voltage

ID = 250 µA; VGS = 0 V

Tj = 25 °C

Tj = −55 °C

VGS(th) gate-source threshold voltage

ID = 1 mA; VDS = VGS; Figure 9

Tj = 25 °C

Tj = 175 °C

Tj = −55 °C

IDSS

drain-source leakage current

IGSS

RDSon

gate-source leakage current

drain-source on-state resistance

VDS = 30 V; VGS = 0 V

Tj = 25 °C

Tj = 175 °C

VGS = ±20 V; VDS = 0 V

VGS = 10 V; ID = 13 A; Figure 7 and 8

Tj = 25 °C

Tj = 175 °C

Dynamic characteristics

Qg(tot)

Qgs

total gate charge

gate-source charge

ID = 15 A; VDD = 15 V; VGS = 10 V;

Figure 13

Qgd

gate-drain (Miller) charge

Ciss

Coss

Crss

td(on)

tr

input capacitance

output capacitance

reverse transfer capacitance

turn-on delay time

rise time

VGS = 0 V; VDS = 30 V; f = 1 MHz;

Figure 11

VDD = 15 V; RL = 0.6 Ω;

VGS = 10 V; RG = 56 Ω

td(off)

turn-off delay time

tf

fall time

Source-drain diode

VSD

source-drain (diode forward) voltage IS = 10 A; VGS = 0 V; Figure 12

Min Typ Max Unit

30 -

27 -

2

3

1

-

-

-

-

V

-

V

V

4

V

-

V

4.4 V

-

0.05 10 µA

-

-

500 µA

-

10 100 nA

-

72 100 mΩ

-

137 190 mΩ

-

5.2 -

nC

-

2.6 -

nC

-

1.2 -

nC

-

180 -

pF

-

85 -

pF

-

60 -

pF

-

6

-

ns

-

45 -

ns

-

12 -

ns

-

23 -

ns

-

1

1.2 V

9397 750 11672

Product data

Rev. 01 — 18 August 2003

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

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