PHD16N03T Просмотр технического описания (PDF) - Philips Electronics

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PHD16N03T

TrenchMOS™ standard level FET

Philips Electronics 

PHD16N03T

TrenchMOS™ standard level FET

Rev. 01 — 18 August 2003

Product data

1. Product profile

1.1 Description

N-channel enhancement mode field-effect transistor in a plastic package using

TrenchMOS™ technology.

Product availability:

PHD16N03T in SOT428 (D-PAK).

1.2 Features

s Fast Switching

s TrenchMOSTM technology.

1.3 Applications

s DC-to-DC converters

s General purpose switch.

1.4 Quick reference data

s VDS ≤ 30 V

s Ptot ≤ 32.6 W

s ID ≤ 13.1 A

s RDSon ≤ 100 mΩ.

2. Pinning information

Table 1:

Pin

1

2

3

mb

Pinning - SOT428, simplified outline and symbol

Description

Simplified outline

gate (g)

drain (d)

[1]

mb

source (s)

mounting base;

connected to drain (d)

2

1

3

Top view

MBK091

SOT428 (D-PAK)

[1] It is not possible to make connection to pin 2 of the SOT428 package.

Symbol

d

g

MBB076

s

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