PHD16N03T Просмотр технического описания (PDF) - Philips Electronics
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PHD16N03T Datasheet PDF : 12 Pages
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Philips Semiconductors
PHD16N03T
TrenchMOS™ standard level FET
3. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
VGSM
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
peak gate-source voltage
drain current (DC)
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
25 °C ≤ Tj ≤ 175 °C
25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ
tp ≤ 50 µs; pulsed; duty cycle = 25%
Tmb = 25 °C; VGS = 10 V; Figure 2 and 3
Tmb = 100 °C; VGS = 10 V; Figure 2
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
Tmb = 25 °C; Figure 1
IS
source (diode forward) current (DC) Tmb = 25 °C
ISM
peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs
Min
Max Unit
-
30
V
-
30
V
-
±20
V
-
±30
V
-
13.1 A
-
9.2
A
-
52.4 A
-
32.6 W
−55
+175 °C
−55
+175 °C
-
13.1 A
-
52.4 A
9397 750 11672
Product data
Rev. 01 — 18 August 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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