PHB66NQ03LT Просмотр технического описания (PDF) - NXP Semiconductors.
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PHB66NQ03LT Datasheet PDF : 13 Pages
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NXP Semiconductors
PHB66NQ03LT
N-channel TrenchMOS logic level FET
25
RDSon
(mΩ)
20
Tj = 25 °C
03ag21
VGS = 4.5 V
15
5V
6V
10
10 V
5
0
0
20
40
60
80
ID (A)
03af18
2
a
1.5
1
0.5
0
-60
0
60
120
180
Tj (°C)
Fig 9. Drain-source on-state resistance as a function
of drain current; typical values
Fig 10. Normalized drain-source on-state resistance
factor as a function of junction temperature
10
VGS
(V)
8
Tj = 25 °C
ID = 50 A
VDD = 15 V
03ag25
104
C
(pF)
03ag24
6
103
Ciss
4
2
0
0
10
20
30
QG (nC)
102
10-1
1
Coss
Crss
10
102
VDS (V)
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PHB66NQ03LT_7
Product data sheet
Rev. 07 — 30 January 2009
© NXP B.V. 2009. All rights reserved.
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