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PHB66NQ03LT

N-channel TrenchMOS logic level FET

NXP Semiconductors. 

NXP Semiconductors

PHB66NQ03LT

N-channel TrenchMOS logic level FET

120

Ider

(%)

80

03aa24

120

Pder

(%)

80

03aa16

40

40

0

0

50

100

150

200

Tmb (°C)

0

0

50

100

150

200

Tmb (°C)

Fig 1. Normalized continuous drain current as a

function of mounting base temperature

103

ID

(A)

102

Limit RDSon = VDS / ID

Fig 2. Normalized total power dissipation as a

function of mounting base temperature

03ag19

tp = 10 μ s

100 μs

10

DC

1 ms

10 ms

100 ms

1

1

10

102

VDS (V)

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

PHB66NQ03LT_7

Product data sheet

Rev. 07 — 30 January 2009

© NXP B.V. 2009. All rights reserved.

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