PHB33NQ20T Просмотр технического описания (PDF) - NXP Semiconductors.
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PHB33NQ20T Datasheet PDF : 12 Pages
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NXP Semiconductors
PHB33NQ20T
N-channel TrenchMOS standard level FET
125
RDSon
(mΩ)
Tj = 25 °C
100
75
50
03ao12
VGS = 4.4 V 4.6 V
5V
10 V
3
a
2
1
03al52
25
0
10
20
30
40
ID (A)
0
−60
0
60
120
180
Tj (°C)
Fig 9. Drain-source on-state resistance as a function
of drain current; typical values
Fig 10. Normalized drain-source on-state resistance
factor as a function of junction temperature
10
VGS
(V)
8
ID = 25 A
Tj = 25 °C
VDS = 40 V
6
03ao16
100 V
160 V
104
C
(pF)
103
03ao15
Ciss
Coss
4
102
Crss
2
0
0
10
20
30
40
QG (nC)
10
10-1
1
10
VDS (V) 102
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PHB33NQ20T_2
Product data sheet
Rev. 02 — 3 February 2009
© NXP B.V. 2009. All rights reserved.
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