PHB33NQ20T Просмотр технического описания (PDF) - NXP Semiconductors.
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PHB33NQ20T Datasheet PDF : 12 Pages
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NXP Semiconductors
120
Ider
(%)
80
03aa24
PHB33NQ20T
N-channel TrenchMOS standard level FET
120
Pder
(%)
80
03aa16
40
40
0
0
50
100
150
200
Tmb (°C)
0
0
50
100
150
200
Tmb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
102
ID
(A)
10
Limit RDSon = VDS / ID
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
tp = 10 μ s
03ao10
100 μs
DC
1 ms
10 ms
10-1
1
10
102
103
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PHB33NQ20T_2
Product data sheet
Rev. 02 — 3 February 2009
© NXP B.V. 2009. All rights reserved.
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