MMDF2C03HD Просмотр технического описания (PDF) - ON Semiconductor
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MMDF2C03HD Datasheet PDF : 10 Pages
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MMDF2C03HD
N−Channel
350
ID = 9 A
300
250
200
150
100
50
0
25
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
P−Channel
350
ID = 6 A
300
250
200
150
100
50
0
25
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
TYPICAL ELECTRICAL CHARACTERISTICS
10
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
1.0E-05
SINGLE PULSE
1.0E-04
1.0E-03
Normalized to qja at 10s.
Chip 0.0175 W 0.0710 W 0.2706 W 0.5776 W 0.7086 W
0.0154 F 0.0854 F 0.3074 F 1.7891 F 107.55 F Ambient
1.0E-02
1.0E-01
t, TIME (s)
1.0E+00
1.0E+01
1.0E+02
1.0E+03
Figure 14. Thermal Response
IS
tp
di/dt
trr
ta
tb
0.25 IS
IS
TIME
Figure 15. Diode Reverse Recovery Waveform
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