MMDF2C03HD Просмотр технического описания (PDF) - ON Semiconductor
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MMDF2C03HD Datasheet PDF : 10 Pages
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MMDF2C03HD
TYPICAL ELECTRICAL CHARACTERISTICS
N−Channel
0.6
ID = 1.5 A
0.5
TJ = 25°C
0.4
0.3
0.2
0.1
0
2
3
4
5
6
7
8
9 10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus
Gate−To−Source Voltage
0.08
TJ = 25°C
0.07
VGS = 4.5
0.06
10 V
0.6
ID = 1 A
TJ = 25°C
0.5
P−Channel
0.4
0.3
0.2
0.1
0
0 1 2 3 4 5 6 7 8 9 10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus
Gate−To−Source Voltage
0.30
TJ = 25°C
0.25
VGS = 4.5 V
0.20
10 V
0.15
0.05
0
0.5
1
1.5
2
2.5
3
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.0
VGS = 10 V
ID = 1.5 A
1.5
1.0
0.5
0
- 50 - 25
0
25 50 75 100
TJ, JUNCTION TEMPERATURE (°C)
125 150
Figure 5. On−Resistance Variation with
Temperature
0.10
0 0.5 1
1.5
2
2.5 3
3.5
4
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.6
VGS = 10 V
ID = 2 A
1.4
1.2
1.0
0.8
0.6
- 50 - 25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
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