MMDF2C03HD Просмотр технического описания (PDF) - ON Semiconductor
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MMDF2C03HD Datasheet PDF : 10 Pages
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MMDF2C03HD
N−Channel
1200
VDS = 0 V VGS = 0 V
Ciss
1000
TJ = 25°C
800
600 Crss
Ciss
400
200
Coss
0
10 5
0
Crss
5 10 15 20 25 30
VGS
VDS
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
P−Channel
1200
VDS = 0 V VGS = 0 V
1000 Ciss
TJ = 25°C
800
600 Crss
400
200
Ciss
Coss
Crss
0
10
5
0
5 10 15 20 25 30
VGS
VDS
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
12
24
QT
9
VDS
18
VGS
6
12
Q1
Q2
3
6
Q3
ID = 3 A
TJ = 25°C
0
0
0
2
4
6
8
10
12
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
12
24
QT
10
8
VDS
20
VGS
16
6
Q1
Q2
4
ID = 2 A
12
TJ = 25°C
8
2
Q3
0
0
2
4
0
4
6
8 10 12 14 16
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
1000
VDD = 15 V
ID = 3 A
VGS = 10 V
TJ = 25°C
100
td(off)
tr
10
tf
td(on)
1000
VDD = 15 V
ID = 2 A
VGS = 10 V
tf
100 TJ = 25°C td(off)
10
tr
td(on)
1
1
1
10
100
1
10
100
RG, GATE RESISTANCE (OHMS)
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
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