A64E06161(2004) Просмотр технического описания (PDF) - AMIC Technology
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A64E06161 Datasheet PDF : 20 Pages
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A64E06161
Preliminary
Features
Operating voltage:
VCC: 1.7V to 1.95V
VCCQ: 1.7V to VCC
Access times: tAA = 70ns (max.)
Page Access times: tPAA = 25ns (max)
Current:
A64E06161 series:
Operating Current (Icc1) : 15mA (max.)
Standby Current (Isb1) : 100uA (max)
Deep Power Down Standby Current (IZZ) : 10µA (max.)
4-word page length
General Description
The A64E06161 is a low operating current 16,777,216-bit
super RAM organized as 1,048,576 word by 16bit and
operated on low power supply voltage from 1.7V to 1.95V.
It is built using AMIC’s high performance CMOS DRAM
process.
Using hidden refresh technique, the A64E06161 provides a
compatible asynchronous interface and data can be read in
4-word page mode for fast access times. The A64E06161
has an internal register named the Configuration Register
Pin Configuration
1M X 16 Bit Low Voltage Super RAM
Support 4 distinct operation modes for reducing standby
power :
Deep Power Down (DPD) mode
Reduce Memory Size (RMS) mode (4M, 8M, 12M)
Partial Array Refresh (PAR) mode (4M,8M,12M)
Temperature Compensated Refresh (TCR) mode
Industrial operating temperature range: -25°C to +85°C
for – I
Available in 48-ball Mini BGA (6X8) package.
(CR) that controls the operation. The A64E06161 is
designed for reducing current consumption during hidden
self refresh and operating through following mode: Deep
Power Down (DPD) mode, Reduce Memory Size (RMS)
mode, Partial Array Refresh (PAR) mode and Temperature
Compensated refresh (TCR) mode.
This A64E06161 is suited for low power application such as
mobile phone and PDA or other battery-operated handheld
device.
Mini BGA (6X8) Top View
1
2
3
A LB
OE
A0
B I/O8 HB
A3
C I/O9 I/O10 A5
4
5
6
A1
A2
ZZ
A4
CE
I/O0
A6 I/O1 I/O2
D VSSQ I/O11 A17 A7 I/O3 VCC
E VCCQ I/O12 NC A16 I/O4 VSS
F I/O14 I/O13 A14 A15 I/O5 I/O6
G I/O15 A19 A12 A13 WE I/O7
H A18 A8 A9 A10 A11 NC
A64E06161G
PRELIMINARY (November, 2004, Version 0.1)
1
AMIC Technology, Corp.
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